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GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors

✍ Scribed by Yi-Jen Chan; Chia-Song Wu; Jen-Inn Chyl; Jia-Lin Shieh

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 484 KB
Volume: 11
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19960220)11:3<148::aid-mop10>3.0.co;2-7

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✦ Synopsis

As heierostmctures grown on GaAs sub-

strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterostmcture demonstrated a g, of 230 mS/mm, an fT of 23 GHz, and an f m O x of 73 GHz.

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