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Magnetic field sensitivity of In0.75Ga0.25As Hall nanoprobes

✍ Scribed by Andrea Candini; Franco Carillo; Giorgio Biasiol; Pasqualantonio Pingue; Marco Affronte; Lucia Sorba


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
491 KB
Volume
147
Category
Article
ISSN
0921-5107

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✦ Synopsis


We have fabricated and characterized Hall probes on an In 0.75 Al 0.25 As/In 0.75 Ga 0.25 As two-dimensional electron gas with lateral sizes down to 100 nm. We studied the dependence of the low temperature (4 K) magnetic field sensitivity on the probe size, showing that the best flux sensitivity is achieved by devices of β‰ˆ 200 nm, employing highly doped systems (n ∼ 10 12 cm -2 ). Hall bars with sizes down to the range of 200-250 nm show a magnetic field sensitivity of a few Gauss, corresponding to a flux sensitivity equal to β‰ˆ 10 -2 Ξ¦ 0 .


πŸ“œ SIMILAR VOLUMES


High-field transport in high carrier den
✍ M. van der Burgt; A. Van Esch; F.M. Peeters; M. Van Hove; G. Borghs; F. Herlach πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 339 KB

We report magnetotransport experiments in high carrier density GaAs/GaoslnozAs/Gao.75Alo25As heterostructures in magnetic fields up to 50 T. At the lowest electron densities the quantized Hall effect is observed, with one subband occupied. As the density is increased, features indicating the populat