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Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures

✍ Scribed by D.Y. Lee; J.Y. Leem; S.K. Kang; J.S. Kim; J.S. Son; I.H. Bae

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 215 KB
Volume: 19
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(03)00379-5

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