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Determination of the subband carrier densities in a strained GaAs/In0.15Ga0.85As/Al0.22Ga0.78As single quantum well using photoluminescence

โœ Scribed by T.W. Kim; M. Jung; D.U. Lee


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
304 KB
Volume
93
Category
Article
ISSN
0169-4332

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