Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors

✍ Scribed by Mahaveer Sathaiya, D.; Karmalkar, Shreepad

• Book ID: 127046283
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 299 KB
• Volume: 99
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2191620