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Scattering mechanisms limiting two-dimensional electron gas mobility in Al[sub 0.25]Ga[sub 0.75]N/GaN modulation-doped field-effect transistors

✍ Scribed by Antoszewski, J.; Gracey, M.; Dell, J. M.; Faraone, L.; Fisher, T. A.; Parish, G.; Wu, Y.-F.; Mishra, U. K.

Book ID: 121443162
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 258 KB
Volume: 87
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.372432

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