𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

✍ Scribed by M. Wolter; P. Javorka; A. Fox; M. Marso; H. Lüth; P. Kordoš; R. Carius; A. Alam; M. Heuken


Book ID
107452788
Publisher
Springer US
Year
2002
Tongue
English
Weight
140 KB
Volume
31
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Traps and defects in pre- and post- stre
✍ Sin, Yongkun ;Foran, Brendan ;Joh, Jungwoo ;del Alamo, Jesus A. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB

## Abstract We used deep level transient spectroscopy (DLTS) and HR‐TEM techniques to study traps and defects in pre‐ and post‐stressed AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi‐insulating SiC substrates. DLTS identified two dominant traps with activation energies