Traps and defects in pre- and post- stre
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Sin, Yongkun ;Foran, Brendan ;Joh, Jungwoo ;del Alamo, Jesus A.
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Article
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2011
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John Wiley and Sons
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English
⚖ 297 KB
## Abstract We used deep level transient spectroscopy (DLTS) and HR‐TEM techniques to study traps and defects in pre‐ and post‐stressed AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi‐insulating SiC substrates. DLTS identified two dominant traps with activation energies