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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

✍ Scribed by Kuzmik, J.; Pozzovivo, G.; Ostermaier, C.; Strasser, G.; Pogany, D.; Gornik, E.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Grandjean, N.

Book ID: 121366599
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 400 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3272058

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