InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

The structure of InAlN/GaN heterostructu

The structure of InAlN/GaN heterostructures for high electron mobility transistors

✍ Vilalta-Clemente, A. ;Poisson, M. A. ;Behmenburg, H. ;Giesen, C. ;Heuken, M. ;Ru 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 462 KB

## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl