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High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors

✍ Scribed by Xie, Jinqiao; Ni, Xianfeng; Wu, Mo; Leach, Jacob H.; Ozgur, Umit; Morkoc, Hadis

Book ID: 118231825
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 679 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2794419

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