Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

✍ Scribed by Yuanjie Lv, Zhaojun Lin, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Yingxia Yu, Zhihong Feng, Zhanguo Wang

• Book ID: 119906055
• Publisher: Springer-Verlag
• Year: 2012
• Tongue: English
• Weight: 314 KB
• Volume: 7
• Category: Article
• ISSN: 1931-7573
• DOI: 10.1186/1556-276x-7-434