Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

✍ Scribed by Luan, Chongbiao; Lin, Zhaojun; Lv, Yuanjie; Feng, Zhihong; Zhao, Jingtao; Zhou, Yang; Yang, Qihao; Yang, Ming

• Book ID: 122217944
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 685 KB
• Volume: 62
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2014.04.027