Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors

✍ Scribed by Luan, Chongbiao; Lin, Zhaojun; Lv, Yuanjie; Feng, Zhihong; Zhao, Jingtao; Yang, Qihao; Yang, Ming

• Book ID: 125345027
• Publisher: Springer
• Year: 2014
• Tongue: English
• Weight: 595 KB
• Volume: 116
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-014-8403-6