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Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors

✍ Scribed by Hussein, A.SH.; Ghazai, Alaa J.; Salman, Emad A.; Hassan, Z.

Book ID: 120986331
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 306 KB
Volume: 63
Category: Article
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2013.08.009

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