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GaN/AlGaN high electron mobility transistors with f of 110 GHz

✍ Scribed by Micovic, M.; Nguyen, N.X.; Janke, P.; Wong, W.-S.; Hashimoto, P.; McCray, L.-M.; Nguyen, C.

Book ID: 120066710
Publisher: The Institution of Electrical Engineers
Year: 2000
Tongue: English
Weight: 262 KB
Volume: 36
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:20000296

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