𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Minipressure sensor using AlGaN/GaN high electron mobility transistors

✍ Scribed by Hung, S. C.; Chou, B. H.; Chang, C. Y.; Lo, C. F.; Chen, K. H.; Wang, Y. L.; Pearton, S. J.; Dabiran, Amir; Chow, P. P.; Chi, G. C.; Ren, F.

Book ID
121733364
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
488 KB
Volume
94
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

DNA-sensor based on AlGaN/GaN high elect
DNA-sensor based on AlGaN/GaN high electron mobility transistor
✍ Schwarz, Stefan U. ;Linkohr, Stefanie ;Lorenz, Pierre ;Krischok, Stefan ;Nakamur πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 312 KB

## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov

AlGaN/GaN high electron mobility transis
AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions
✍ Alifragis, Y. ;Volosirakis, A. ;Chaniotakis, N. A. ;Konstantinidis, G. ;Iliopoul πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract Chemically modified Field Effect Transistor (ChemFET) sensor for ammonium (NH$ ^+\_4 $) ions was developed from AlGaN/GaN High Electron Mobility Transistor (HEMT) structures (NH$ ^+\_4 $‐ChemHEMT). The sensor consists of a HEMT device with non‐metallized gate, which was coated with a po