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The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

✍ Scribed by Liu, L. (author);Lo, C. F. (author);Xi, Y. Y. (author);Wang, Y. X. (author);Kim, H.-Y. (author);Kim, J. (author);Pearton, S. J. (author);Laboutin, O. (author);Cao, Y. (author);Johnson, J. W. (author);Kravchenko, I. I. (author);Ren, F. (author)

Book ID: 121318347
Publisher: SPIE
Year: 2013
Weight: 731 KB
Volume: 8625
Category: Article
ISBN: 0819493945
ISSN: 0277-786X
DOI: 10.1117/12.2007287

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