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Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

✍ Scribed by Xinwen Hu, ; Karmarkar, A.P.; Bongim Jun, ; Fleetwood, D.M.; Schrimpf, R.D.; Geil, R.D.; Weller, R.A.; White, B.D.; Bataiev, M.; Brillson, L.J.; Mishra, U.K.


Book ID
120373444
Publisher
IEEE
Year
2003
Tongue
English
Weight
356 KB
Volume
50
Category
Article
ISSN
0018-9499

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Neutron irradiation on AlGaN/GaN high el
✍ Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 554 KB

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Γ‚ 100 mm 2 gate were irradiated with a dose of 2.8 Γ‚ 10 11 cm Γ€ 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur