Neutron irradiation on AlGaN/GaN high el
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Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang
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Article
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2011
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Elsevier Science
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English
⚖ 554 KB
Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Â 100 mm 2 gate were irradiated with a dose of 2.8 Â 10 11 cm À 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur