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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

✍ Scribed by Lü, Ling; Zhang, Jin-Cheng; Xue, Jun-Shuai; Ma, Xiao-Hua; Zhang, Wei; Bi, Zhi-Wei; Zhang, Yue; Hao, Yue


Book ID
120060290
Publisher
IOP Publishing
Year
2012
Tongue
English
Weight
339 KB
Volume
21
Category
Article
ISSN
1674-1056

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Neutron irradiation on AlGaN/GaN high el
✍ Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 554 KB

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Â 100 mm 2 gate were irradiated with a dose of 2.8 Â 10 11 cm À 2 neutrons and average energy of 9.8 MeV. 10% of drain-source cur