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Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

✍ Scribed by Weaver, B. D.; Martin, P. A.; Boos, J. B.; Cress, C. D.


Book ID
120081846
Publisher
IEEE
Year
2012
Tongue
English
Weight
806 KB
Volume
59
Category
Article
ISSN
0018-9499

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