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Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

✍ Scribed by Lachab, M; Sultana, M; Fareed, Q; Husna, F; Adivarahan, V; Khan, A

Book ID
126476617
Publisher
Institute of Physics
Year
2014
Tongue
English
Weight
586 KB
Volume
47
Category
Article
ISSN
0022-3727

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