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Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates

✍ Scribed by Killat, Nicole; Pomeroy, James W.; Jimenez, Jose L.; Kuball, Martin

Book ID: 127352855
Publisher: John Wiley and Sons
Year: 2014
Tongue: English
Weight: 294 KB
Volume: 211
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201431440

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