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Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

✍ Scribed by Redwing, J. M.; Tischler, M. A.; Flynn, J. S.; Elhamri, S.; Ahoujja, M.; Newrock, R. S.; Mitchel, W. C.

Book ID: 125455604
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 307 KB
Volume: 69
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.117096

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