The field emission properties of nonpola
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Sun, Lili ;Yan, Fawang ;Wang, Junxi ;Zhang, Huixiao ;Zeng, Yiping ;Wang, Guohong
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Article
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2009
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John Wiley and Sons
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English
⚖ 220 KB
## Abstract Si‐doped nonpolar __a__ ‐plane GaN films were grown on nano‐patterned sapphire substrates by a low‐pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high‐resolution X‐ray diffra