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The properties of AlGaN films and AlGaN/GaN heterostructures grown on ((11ar{2}0)) sapphire substrates

✍ Scribed by Wei-Tsai Liao; Jyh-Rong Gong; Shih-Wei Lin; Cheng-Liang Wang; Keh-Chang Chen; Jen-Bin Shi; Sheng-Yueh Chang; Kuan-Jiuh Lin


Publisher
Springer US
Year
2006
Tongue
English
Weight
221 KB
Volume
17
Category
Article
ISSN
0957-4522

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## Abstract Si‐doped nonpolar __a__ ‐plane GaN films were grown on nano‐patterned sapphire substrates by a low‐pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high‐resolution X‐ray diffra