The field emission properties of nonpolara-plane n-type GaN films grown on nano-patterned sapphire substrates
✍ Scribed by Sun, Lili ;Yan, Fawang ;Wang, Junxi ;Zhang, Huixiao ;Zeng, Yiping ;Wang, Guohong ;Li, Jinmin
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 220 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Si‐doped nonpolar a ‐plane GaN films were grown on nano‐patterned sapphire substrates by a low‐pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high‐resolution X‐ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a ‐plane (11$ \bar 2 $0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/μm at a current density of 0.63 μA/cm^2^, and a high field emission current density of 74 mA/cm^2^ at an applied field of 24 V/μm. Moreover, the Fowler–Nordheim plot of the sample fits a near linear relation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)