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Strong luminescence of two-dimensional electron gas in tensile-stressed AlGaN/GaN heterostructures grown on Si substrates

✍ Scribed by Kim, Ki-Won; Kim, Dong-Seok; Im, Ki-Sik; Lee, Jung-Hee; Kwon, Bong-Joon; Kwack, Ho-Sang; Beck, Seol; Cho, Yong-Hoon

Book ID: 119991869
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 631 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3578399

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It