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Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates

✍ Scribed by Li, Wei; Ni, Wei-Xin

Book ID: 120188432
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 282 KB
Volume: 68
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.116315

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