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Residual strains in GaN grown on 6H-SiC

✍ Scribed by Nikitina, I.P.; Sheglov, M.P.; Melnik, Yu.V.; Irvine, K.G.; Dmitriev, V.A.


Book ID
122579767
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
462 KB
Volume
6
Category
Article
ISSN
0925-9635

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## Ε½ . AbstractThe reflective high-energy electron diffraction RHEED patterns were obtained during the growth of GaN by Ε½ . metal-organic molecular beam epitaxy MOMBE . The lattice relaxation of GaN layers was observed during the initial growth at growth temperature. The estimated lattice constant