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MOVPE-grown GaN on polar planes of 6H-SiC

✍ Scribed by T. Sasaki; T. Matsuoka; A. Katsui

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 560 KB
Volume: 41-42
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(89)90110-4

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