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Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001) 6H-SiC with GaN/AlN Buffer

โœ Scribed by Kurimoto, M. ;Nakada, T. ;Ishihara, Y. ;Shibata, M. ;Takano, T. ;Yamamoto, J. ;Honda, T. ;Kawanishi, H.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
133 KB
Volume
176
Category
Article
ISSN
0031-8965

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