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Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates

✍ Scribed by I.P. Nikitina; R.C. Glass; E. Janzén; N.B. Guseva; A.A. Mal'tsev


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
487 KB
Volume
152
Category
Article
ISSN
0022-0248

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro