𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth and characterization of GaN layers on SiC substrates

✍ Scribed by V. Dmitriev; K. Irvine; G. Bulman; J. Edmond; A. Zubrilov; V. Nikolaev; I. Nikitina; D. Tsvetkov; A. Babanin; A. Sitnikova; Yu. Musikhin; N. Bert


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
409 KB
Volume
166
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


GaN Substrates: Growth and Characterizat
✍ Kryliouk, O. ;Reek, M. ;Mastro, M. ;Anderson, T. ;Chai, B. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 126 KB
MOCVD Growth and Characterization of GaN
✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 169 KB πŸ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality