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Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates

✍ Scribed by M.A. Sánchez-García; F.J. Sánchez; F. Calle; E. Muñoz; E. Calleja; K.S. Stevens; M. Kinniburgh; R. Beresford; B. Beaumont; P. Gibart

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
343 KB
Volume
40
Category
Article
ISSN
0038-1101

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## Abstract GaN nano‐ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100–150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the com