Ellipsometric Studies of Bulk 4H and 6H SiC Substrates
β Scribed by Zollner, S. ;Hilifker, J. N.
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 121 KB
- Volume
- 166
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γuences ranging from 7.5 Γ 1017 to 1 Γ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc
Single crystals of Rubidium Hydrogen Tartrate (RbHT) and Strontium Tartrate Tetrahydrate (SrTT) have been grown by a gel technique using a chemical reaction method. A controlled reaction has been employed between tartaric acid and feed solution (RbCl for RbHT and Sr(NO 3 ) 2 ) at room temperature. T