The role of excess silicon and in situ etching on 4HSiC and 6HSiC epitaxial layer morphology

✍ Scribed by A.A. Burk Jr.; L.B. Rowland

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 656 KB
• Volume: 167
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(96)00293-x