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Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

✍ Scribed by Davydov, V. Yu.; Averkiev, N. S.; Goncharuk, I. N.; Nelson, D. K.; Nikitina, I. P.; Polkovnikov, A. S.; Smirnov, A. N.; Jacobson, M. A.; Semchinova, O. K.


Book ID
119944617
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
379 KB
Volume
82
Category
Article
ISSN
0021-8979

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