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Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

✍ Scribed by Waltereit, P.; Brandt, O.; Trampert, A.; Ramsteiner, M.; Reiche, M.; Qi, M.; Ploog, K. H.

Book ID
121694512
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
527 KB
Volume
74
Category
Article
ISSN
0003-6951

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Surface and defect microstructure of GaN
Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show