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Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates

✍ Scribed by Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
813 KB
Volume
57
Category
Article
ISSN
1359-6454

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Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show