✦ LIBER ✦

Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates

✍ Scribed by Cho, E.; Mogilatenko, A.; Brunner, F.; Richter, E.; Weyers, M.

Book ID: 120199009
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 861 KB
Volume: 371
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.02.001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of AlN nucleation layers on gr

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

✍ Waltereit, P.; Brandt, O.; Trampert, A.; Ramsteiner, M.; Reiche, M.; Qi, M.; Plo 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 527 KB

Optical Characteristic of the Strain-Con

Optical Characteristic of the Strain-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer

✍ Horie, M. ;Ishihara, Y. ;Yamamoto, J. ;Kurimoto, M. ;Takano, T. ;Kawanishi, H. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 152 KB 👁 2 views

Possibility of Strain Control in AlN Lay

Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001) 6H-SiC with GaN/AlN Buffer

✍ Kurimoto, M. ;Nakada, T. ;Ishihara, Y. ;Shibata, M. ;Takano, T. ;Yamamoto, J. ;H 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 133 KB 👁 1 views

Surface and defect microstructure of GaN

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates

✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show

Residual strain in GaN epilayers grown o

Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates

✍ Li, Wei; Ni, Wei-Xin 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 282 KB

Sequential growths of AlN and GaN layers

Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates

✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 813 KB