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GaN grown on hydrogen plasma cleaned 6H-SiC substrates

✍ Scribed by Lin, M. E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G. L.; Teraguchi, N.; Rockett, A.; MorkocÌ§, H.

Book ID: 120495473
Publisher: American Institute of Physics
Year: 1993
Tongue: English
Weight: 608 KB
Volume: 62
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.108845

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