𝔖 Bobbio Scriptorium
✦   LIBER   ✦

AlGaN/GaN HEMTs grown on SiC substrates

✍ Scribed by Redwing, J.M.; Kelner, G.; Kruppa, W.; Binari, S.C.

Book ID
115458966
Publisher
The Institution of Electrical Engineers
Year
1997
Tongue
English
Weight
281 KB
Volume
33
Category
Article
ISSN
0013-5194

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Large Area AlGaN/GaN HEMTs Grown on Insu
Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates
✍ Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;WοΏ½rfl, J. ;MοΏ½ller, S. ;KοΏ½hler, K. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 94 KB πŸ‘ 2 views

Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma

Reliability Evaluation of High Power AlG
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 86 KB πŸ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we