𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

✍ Scribed by Green, B.M.; Tilak, V.; Lee, S.; Kim, H.; Smart, J.A.; Webb, K.J.; Shealy, J.R.; Eastman, L.F.


Book ID
114554226
Publisher
IEEE
Year
2001
Tongue
English
Weight
268 KB
Volume
49
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Reliability Evaluation of High Power AlG
✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 86 KB πŸ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we

AlGaN/GaN HEMTs grown on SiC substrates
✍ Redwing, J.M.; Kelner, G.; Kruppa, W.; Binari, S.C. πŸ“‚ Article πŸ“… 1997 πŸ› The Institution of Electrical Engineers 🌐 English βš– 281 KB