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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

✍ Scribed by Ge, Qin; Chen, Xiaojuan; Luo, Weijun; Yuan, Tingting; Pang, Lei; Liu, Xinyu


Book ID
118006672
Publisher
IOP Publishing
Year
2011
Tongue
English
Weight
572 KB
Volume
32
Category
Article
ISSN
1674-4926

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## Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement