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GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

✍ Scribed by R. Quay; R. Kiefer; F. van Raay; R. Reiner; O. Kappeler; S. Müller; M. Dammann; W. Bronner; M. Mikulla; M. Schlechtweg; D. Wiegner; U. Seyfried; W. Templ; G. Weimann

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 247 KB
Volume: 3
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200564167

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Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB 👁 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we