Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we
β¦ LIBER β¦
High performance 1 mm AlGaN/GaN HEMT based on SiC substrate
β Scribed by Weijun Luo; Xiaojuan Chen; Chengzhan Li; Xinyu Liu; Zhijing He; Ke Wei; Xiaoxin Liang; Xiaoliang Wang
- Publisher
- SP Higher Education Press
- Year
- 2008
- Tongue
- English
- Weight
- 103 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1673-3584
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Reliability Evaluation of High Power AlG
β
Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma
π
Article
π
2001
π
John Wiley and Sons
π
English
β 86 KB
π 2 views
Fabrication and Performance of AlGaN/GaN
β
Javorka, P. ;Alam, A. ;Marso, M. ;Wolter, M. ;Fox, A. ;Heuken, M. ;Kordo?, P.
π
Article
π
2002
π
John Wiley and Sons
π
English
β 113 KB
π 2 views
High transconductance AlGaN/GaN-HEMT wit
β
Okita, Hideyuki ;Kaifu, Katsuaki ;Mita, Juro ;Yamada, Tomoyuki ;Sano, Yoshiaki ;
π
Article
π
2003
π
John Wiley and Sons
π
English
β 113 KB
GaN/AlGaN HEMT hybrid and MMIC microstri
β
R. Quay; R. Kiefer; F. van Raay; R. Reiner; O. Kappeler; S. MΓΌller; M. Dammann;
π
Article
π
2006
π
John Wiley and Sons
π
English
β 247 KB
High-Performance AlGaN/GaN High Electron
β
Kumar, V. ;Kuliev, A. ;Schwindt, R. ;Simin, G. ;Yang, J. ;Asif Khan, M. ;Adesida
π
Article
π
2002
π
John Wiley and Sons
π
English
β 103 KB
π 1 views
Optical study of AlGaN/GaN based HEMT st
β
Ochalski, Tomasz J. ;Grzegorczyk, Andrzej ;Rudzinski, Mariusz ;Larsen, Poul K. ;
π
Article
π
2005
π
John Wiley and Sons
π
English
β 439 KB
## Abstract A detailed photoluminescence (PL), timeβresolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors