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High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

✍ Scribed by Okita, Hideyuki ;Kaifu, Katsuaki ;Mita, Juro ;Yamada, Tomoyuki ;Sano, Yoshiaki ;Ishikawa, Hiroyasu ;Egawa, Takashi ;Jimbo, Takashi

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
113 KB
Volume
200
Category
Article
ISSN
0031-8965

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