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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

✍ Scribed by Tapajna, M.; Killat, N.; Moereke, J.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Ozgur, U.; Morkoc, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.

Book ID
118036294
Publisher
IEEE
Year
2012
Tongue
English
Weight
338 KB
Volume
33
Category
Article
ISSN
0741-3106

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Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma