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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

✍ Scribed by Kuzmik, J.; Bychikhin, S.; Neuburger, M.; Dadgar, A.; Krost, A.; Kohn, E.; Pogany, D.

Book ID
114617902
Publisher
IEEE
Year
2005
Tongue
English
Weight
521 KB
Volume
52
Category
Article
ISSN
0018-9383

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Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma