Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

✍ Scribed by Kuzmik, J.; Javorka, R.; Alam, A.; Marso, M.; Heuken, M.; Kordos, P.

• Book ID: 114616814
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 217 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.801430