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[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

✍ Scribed by Kovac, J.; Jha, S. K.; Jelenkovic, E. V.; Kutsay, O.; Pejovic, M.; Surya, C.; Zapien, J. A.; Bello, I.; Srnanek, R.; Kovac, J.; Flickyngerova, S.

Book ID: 115536410
Publisher: IEEE
Year: 2010
Weight: 239 KB
Volume: 0
Category: Article
ISBN: 1424485746
DOI: 10.1109/asdam.2010.5666315

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